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mmg3007nt1 1 rf device data freescale semiconductor, inc. mmg3007nt1 0--6000 mhz, 19 db 16 dbm ingap hbt heterojunction bipolar transistor (ingap hbt) broadband high linearity amplifier the mmg3007nt1 is a general purpose amplifier that is internally input and output matched. it is designed for a broad range of class a, small--signal, high linearity, general purpose applications. it is suitable for applications with frequencies from 0 to 6000 mhz such as cellular, pcs, bwa, wll, phs, catv, vhf, uhf, umts and general small--signal rf. features ? frequency: 0 to 6000 mhz ? p1db: 16 dbm @ 900 mhz ? small--signal gain: 19 db @ 900 mhz ? third order output intercept point: 30 dbm @ 900 mhz ? single 5 volt supply ? internally matched to 50 ohms ? cost--effective sot--89 surface mount package ? in tape and reel. t1 suffix = 1000 units, 12 mm tape width, 7 inch reel. case 1514--02, style 1 sot--89 plastic 1 2 3 table 1. typical performance (1) characteristic symbol 900 mhz 2140 mhz 3500 mhz unit small--signal gain (s21) g p 19 16.5 14 db input return loss (s11) irl -- 1 4 -- 2 1 -- 2 1 db output return loss (s22) orl -- 2 0 -- 1 7 -- 2 5 db power output @1db compression p1db 16 15.5 16 dbm third order output intercept point oip3 30 29 28.5 dbm 1. v cc =5vdc,t a =25 c, 50 ohm system. table 2. maximum ratings rating symbol value unit supply voltage v cc 7 v supply current i cc 250 ma rf input power p in 10 dbm storage temperature range t stg --65 to +150 c junction temperature (2) t j 150 c 2. for reliable operation, the j unction temperature should not exceed 150 c. table 3. thermal characteristics characteristic symbol value (3) unit thermal resistance, junction to case case temperature 86 c, 5 vdc, 47 ma, no rf applied r jc 77 c/w 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. document number: mmg3007nt1 rev. 6, 2/2012 freescale semiconductor technical data ? freescale semiconductor, inc., 2005--2008, 2012. a ll rights reserved.
2 rf device data freescale semiconductor, inc. mmg3007nt1 table 4. electrical characteristics (v cc = 5 vdc, 900 mhz, t a =25 c, 50 ohm system, in freescale application circuit) characteristic symbol min typ max unit small--signal gain (s21) g p 18 19 ? db input return loss (s11) irl ? -- 1 4 ? db output return loss (s22) orl ? -- 2 0 ? db power output @ 1db compression p1db ? 16 ? dbm third order output intercept point oip3 ? 30 ? dbm noise figure nf ? 3.8 ? db supply current (1) i cc 39 47 55 ma supply voltage (1) v cc ? 5 ? v 1. for reliable operation, the juncti on temperature should not exceed 150 c.
mmg3007nt1 3 rf device data freescale semiconductor, inc. table 5. functional pin description pin number pin function 1 rf in 2 ground 3 rf out /dc supply table 6. esd protection characteristics test methodology class human body model (per jesd 22--a114) 1a machine model (per eia/jesd 22--a115) a charge device model (per jesd 22--c101) iv table 7. moisture sensitivity level test methodology rating package peak temperature unit per jesd 22--a113, ipc/jedec j--std--020 1 260 c figure 1. functional diagram 3 2 1 2
4 rf device data freescale semiconductor, inc. mmg3007nt1 50 ohm typical characteristics 10 25 0 t c =85 c f, frequency (ghz) figure 2. small--signal gain (s21) versus frequency 20 15 1234 g p , small--signal gain (db) 25 c -- 4 0 c 4 -- 4 0 0 0 s22 f, frequency (ghz) figure 3. input/output return loss versus frequency s11 -- 1 0 -- 2 0 -- 3 0 123 s11, s22 (db) 16 9 23 8 p out , output power (dbm) figure 4. small--signal gain versus output power 21 19 17 15 13 910 12 1960 mhz 11 14 3.5 3 2.5 2 1.5 1 0.5 13 20 19 18 16 14 f, frequency (ghz) figure 5. p1db versus frequency p1db, 1 db compression point (dbm) 17 15 5.4 0 100 4 v cc , collector voltage (v) figure 6. collector current versus collector voltage 80 60 20 4.2 5 5.2 i cc , collector current (ma) 40 4.4 4.6 4.8 4 18 33 0 f, frequency (ghz) figure 7. third order output intercept point versus frequency 30 27 24 21 123 v cc =5vdc 1 mhz tone spacing oip3, third order output intercept point (dbm) 15 13 11 g p , small--signal gain (db) v cc =5vdc 900 mhz 2600 mhz 3500 mhz 2140 mhz v cc =5vdc v cc =5vdc v cc =5vdc
mmg3007nt1 5 rf device data freescale semiconductor, inc. 50 ohm typical characteristics 21 36 4.9 v cc , collector voltage (v) figure 8. third order output intercept point versus collector voltage 33 30 27 24 oip3, third order output intercept point (dbm) 4.95 5 5.1 5.05 f = 900 mhz 1 mhz tone spacing 100 -- 4 0 -- 2 0 0 2 0 4 0 6 0 8 0 25 32 t, temperature ( _ c) figure 9. third order output intercept point versus case temperature 30 29 28 27 oip3, third order output intercept point (dbm) 26 figure 10. third order intermodulation distortion versus output power p out , output power (dbm) imd, third order intermodulation d istortion (dbc) -- 3 1 5 9 13 -- 8 0 -- 3 0 -- 5 0 -- 6 0 -- 7 0 -- 4 0 150 10 3 10 6 120 figure 11. mttf versus junction temperature 10 4 125 130 135 140 145 t j , junction temperature ( c) note: the mttf is calculated with v cc =5vdc,i cc =47ma mttf (years) 4 0 8 0 f, frequency (ghz) figure 12. noise figure versus frequency 6 4 2 123 nf, noise figure (db) -- 7 0 -- 2 0 -- 2 p out , output power (dbm) figure 13. single--carrier w--cdma adjacent channel power ratio versus output power -- 3 0 -- 4 0 -- 5 0 -- 6 0 8 6 4 0 acpr, adjacent channel power ratio (dbc) 10 12 31 10 5 2 v cc =5vdc f = 900 mhz 1 mhz tone spacing v cc =5vdc v cc =5vdc f = 900 mhz 1 mhz tone spacing v cc =5vdc f = 2140 mhz single--carrier w--cdma, 3.84 mhz channel bandwidth input signal par = 8.5 d b @ 0.01% pr obabilit y( ccdf)
6 rf device data freescale semiconductor, inc. mmg3007nt1 50 ohm application circuit: 40--300 mhz figure 14. 50 ohm test circuit schematic rf output rf input v supply c3 c4 z1 z2 c1 z5 c2 r1 l1 v cc z4 z3 dut figure 15. s21, s11 and s22 versus frequency -- 4 0 30 0 f, frequency (mhz) s22 200 300 400 500 20 10 0 -- 1 0 -- 2 0 -- 3 0 figure 16. 50 ohm test circuit component layout c1 l1 c2 r1 c4 c3 z1, z5 0.347 x 0.058 microstrip z2 0.575 x 0.058 microstrip z3 0.172 x 0.058 microstrip z4 0.403 x 0.058 microstrip pcb getek grade ml200c, 0.031 , r =4.1 s21, s11, s22 (db) s21 s11 100 mmg30xx rev 2 v cc =5vdc table 8. 50 ohm test circuit component designations and values part description part number manufacturer c1, c2, c3 0.01 f chip capacitors c0603c103j5rac kemet c4 1000 pf chip capacitor c0603c102j5rac kemet l1 470 nh chip inductor bk2125hm471--t taiyo yuden r1 0 chip resistor erj3gey0r00v panasonic
mmg3007nt1 7 rf device data freescale semiconductor, inc. 50 ohm application circuit: 300--3600 mhz figure 17. 50 ohm test circuit schematic rf output rf input v supply c3 c4 z1 z2 c1 z5 c2 r1 l1 v cc z4 z3 dut figure 18. s21, s11 and s22 versus frequency -- 3 0 30 f, frequency (mhz) s22 800 20 10 0 -- 1 0 -- 2 0 figure 19. 50 ohm test circuit component layout c1 l1 c2 r1 c4 c3 z1, z5 0.347 x 0.058 microstrip z2 0.575 x 0.058 microstrip z3 0.172 x 0.058 microstrip z4 0.403 x 0.058 microstrip pcb getek grade ml200c, 0.031 , r =4.1 s21, s11, s22 (db) s21 s11 1300 300 1800 2300 2800 3300 3800 mmg30xx rev 2 v cc =5vdc table 9. 50 ohm test circuit component designations and values part description part number manufacturer c1, c2 150 pf chip capacitors c0603c151j5rac kemet c3 0.01 f chip capacitor c0603c103j5rac kemet c4 1000 pf chip capacitor c0603c102j5rac kemet l1 56 nh chip inductor hk160856nj--t taiyo yuden r1 0 chip resistor erj3gey0r00v panasonic
8 rf device data freescale semiconductor, inc. mmg3007nt1 50 ohm typical characteristics table 10. common emitter s--parameters (v cc =5vdc,t a =25 c, 50 ohm system) f mhz s 11 s 21 s 12 s 22 |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 100 0.03698 162.744 9.488476 175.169 0.07218 --0.406 0.06601 --6.062 150 0.0413 161.759 9.431009 172.714 0.073936 --0.163 0.07813 -- 1 1 . 7 0 6 200 0.04475 159.333 9.37615 169.547 0.07479 -- 1.111 0.089562 --18.834 250 0.046352 159.222 9.34083 167.191 0.0744 --1.219 0.09748 --25.724 300 0.048403 155.469 9.29558 164.704 0.07458 --1.237 0.10124 --32.775 350 0.05 151.008 9.26495 162.138 0.07444 --1.639 0.10466 --36.946 400 0.0499 147.696 9.21219 159.65 0.07473 --1.957 0.10811 --41.977 450 0.04922 144.11 9.16094 157.234 0.07499 --2.087 0.11164 --46.631 500 0.04838 141.343 9.10787 154.702 0.07517 --2.464 0.11391 --50.846 550 0.04902 137.521 9.04991 152.326 0.07536 --2.681 0.11765 --55.096 600 0.04911 134.226 8.98419 149.922 0.07567 --2.89 0.11998 --59.312 650 0.0497 130.851 8.91939 147.525 0.07584 --3.227 0.12163 --63.354 700 0.05086 127.93 8.85099 145.201 0.07618 --3.577 0.12411 --67.411 750 0.05247 124.848 8.78068 142.838 0.07642 --3.81 0.12586 --71.332 800 0.05441 122.43 8.70765 140.522 0.07659 --4.138 0.12711 --75.244 850 0.05624 120.786 8.63598 138.198 0.07702 --4.463 0.12825 --79.297 900 0.05818 118.791 8.5575 135.918 0.0774 --4.812 0.12922 --83.181 950 0.06054 117.037 8.47718 133.677 0.07767 --5.244 0.13 --87.373 1000 0.06284 115.852 8.40286 131.466 0.07806 --5.558 0.13077 --91.474 1050 0.06676 114.603 8.31905 129.243 0.07848 --5.948 0.13124 --95.143 1100 0.06962 113.845 8.23305 127.045 0.07874 -- 6 . 3 0.13158 --99.674 1150 0.07142 114.019 8.14799 124.84 0.07912 --6.731 0.13134 --104.011 1200 0.07473 113.644 8.05859 122.666 0.07962 --7.194 0.13136 --108.404 1250 0.07822 113.329 7.97269 120.536 0.07992 --7.652 0.13147 --112.847 1300 0.08137 113.158 7.89042 118.443 0.08035 --8.105 0.1318 --117.291 1350 0.08501 112.83 7.80455 116.374 0.08077 --8.476 0.13257 --121.809 1400 0.085621 112.341 7.71693 114.349 0.08135 --8.943 0.13274 --126.4 1450 0.08691 112.503 7.62844 112.301 0.08168 --9.492 0.130129 --130.945 1500 0.087447 112.516 7.55444 110.29 0.08226 --9.966 0.127178 --132.429 1550 0.088958 110.702 7.46781 108.325 0.08275 --10.605 0.125783 --135.873 1600 0.088598 108.771 7.39276 106.371 0.08326 --11.086 0.12282 --139.82 1650 0.089575 107.354 7.30109 104.406 0.08366 --11.654 0.1228 --142.9 1700 0.09071 105.666 7.2314 102.488 0.0841 --12.158 0.12308 --146.866 1750 0.0938 104.101 7.15066 100.592 0.08459 --12.724 0.12424 --150.805 1800 0.097 102.621 7.07137 98.688 0.0851 --13.319 0.12564 --154.586 1850 0.10094 101.285 6.98725 96.791 0.08555 --13.926 0.12718 --158.448 1900 0.10562 99.475 6.90714 94.976 0.08607 --14.507 0.12895 --162.5 1950 0.10927 97.823 6.83262 93.117 0.0865 --15.154 0.13127 --166.07 2000 0.11424 96.4 6.75439 91.288 0.08691 --15.771 0.13415 --169.355 2050 0.11811 94.531 6.67977 89.43 0.08733 --16.325 0.13706 --172.886 2100 0.12221 93.106 6.60249 87.648 0.08781 --17.024 0.14095 --175.782 2150 0.12585 91.879 6.53055 85.88 0.0884 --17.685 0.14488 --179.155 2200 0.13197 90.391 6.44752 84.16 0.08868 --18.268 0.14844 178.18 2250 0.13625 88.624 6.37451 82.389 0.08924 --18.993 0.15223 175.153 (continued)
mmg3007nt1 9 rf device data freescale semiconductor, inc. 50 ohm typical characteristics table 10. common emitter s--parameters (v cc =5vdc,t a =25 c, 50 ohm system) (continued) f mhz s 11 s 21 s 12 s 22 |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 2300 0.14158 86.951 6.30389 80.681 0.08971 --19.632 0.15572 172.537 2350 0.14606 85.398 6.23166 78.989 0.09007 --20.321 0.15962 170.114 2400 0.15065 83.971 6.16179 77.288 0.09053 --20.98 0.16279 167.517 2450 0.15511 82.457 6.09153 75.581 0.09088 --21.711 0.16641 165.072 2500 0.15948 80.991 6.02115 73.906 0.09142 --22.394 0.16996 162.826 2550 0.16385 79.722 5.95767 72.273 0.09177 --23.024 0.17342 160.459 2600 0.16854 78.35 5.89249 70.612 0.09216 --23.702 0.17676 157.989 2650 0.17283 76.864 5.82721 68.994 0.09255 --24.506 0.17953 155.564 2700 0.17698 75.562 5.76221 67.358 0.09293 --25.194 0.18268 153.165 2750 0.18126 74.328 5.70193 65.748 0.09333 --25.926 0.18543 150.629 2800 0.1858 72.976 5.64062 64.155 0.09391 --26.671 0.18837 148.259 2850 0.18957 71.773 5.58104 62.533 0.09428 --27.402 0.19087 145.593 2900 0.19403 70.699 5.52616 60.973 0.09472 --28.203 0.19395 143.044 2950 0.19798 69.575 5.46422 59.362 0.09518 --28.947 0.19629 140.485 3000 0.20132 68.53 5.41159 57.778 0.09558 --29.733 0.19941 137.461 3050 0.20676 67.445 5.36032 56.228 0.09592 --30.462 0.20221 135.101 3100 0.21059 66.347 5.30349 54.654 0.09653 --31.263 0.20477 132.383 3150 0.21388 65.517 5.25234 53.104 0.09687 --32.035 0.20796 129.58 3200 0.21774 64.628 5.20188 51.53 0.09729 --32.944 0.21083 126.913 3250 0.22229 63.76 5.15023 49.962 0.09771 --33.702 0.21442 124.314 3300 0.22492 62.653 5.10104 48.396 0.09812 --34.531 0.21656 121.289 3350 0.2287 61.882 5.05108 46.866 0.09855 --35.414 0.22001 118.535 3400 0.23228 60.924 5.00022 45.297 0.099 --36.284 0.2241 115.888 3450 0.2365 60.161 4.95117 43.756 0.09926 --37.17 0.22826 113.148 3500 0.24039 59.326 4.90461 42.216 0.09948 --38.046 0.23275 110.547 3550 0.24401 58.457 4.85739 40.692 0.09979 --38.943 0.23669 107.983 3600 0.24834 57.659 4.80824 39.155 0.10008 --39.768 0.24177 105.495
10 rf device data freescale semiconductor, inc. mmg3007nt1 1.7 5.33 3.48 0.58 1.27 0.86 3.86 0.64 7.62 2.49 2.54 1.27 0.305 diamete figure 20. recommended mounting configuration notes: 1. thermal and rf grounding considerations should be used in pcb layout design. 2. depending on pcb design rules, as many vias as possible should be placed on the landing pattern. 3. if vias cannot be placed on the landing pattern, then as many vias as possible should be placed as close to the landing pattern as possible for optimal thermal and rf performance. 4. recommended via pattern shown has 0.381 x 0.762 mm pitch. recommended solder stencil
mmg3007nt1 11 rf device data freescale semiconductor, inc. package dimensions
12 rf device data freescale semiconductor, inc. mmg3007nt1
mmg3007nt1 13 rf device data freescale semiconductor, inc.
14 rf device data freescale semiconductor, inc. mmg3007nt1 product documentation, software and tools refer to the following documents, software and tools to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers ? an3100: general purpose amplifier and mmic biasing software ? .s2p file development tools ? printed circuit boards for software and tools, do a part number search at http://www.fr eescale.com, and select the ?part number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 3 mar. 2007 ? corrected and updated part numbers in tables 8 and 9, component designations and values, to rohs compliant part numbers, p. 6, 7 4 july 2007 ? replaced case outline 1514--01 with 1514--02, issue d, p. 1, 11--13. case updated to add missing dimension for pin 1 and pin 3. 5 mar. 2008 ? removed footnote 2, continuous voltage and current applied to device, from table 2, maximum ratings, p. 1 ? corrected fig. 13, single--carrier w--cdma adjacent channel power ratio versus output power y--axis (acpr) unit of measure to dbc, p. 5 ? corrected s--parameter table frequency column label to read ?mhz? versus ?ghz? and corrected frequency values from ghz to mhz, p. 8, 9 6 feb. 2012 ? corrected temperature at which thetajc is measured from 25 cto86 c and added ?no rf applied? to thermal characteristics table to indicate that ther mal characterization is performed under dc test with no rf signal applied, p. 1 ? table 6, esd protection characte rization, removed the word ?minimum? after the esd class rating. esd ratings are characterized during new product dev elopment but are not 100% tested during production. esd ratings provided in the data sheet are intended to be used as a guideline when handling esd sensitive devices, p. 3 ? removed i cc bias callout from applicable graphs and tabl e 10, common emitter s--parameters heading as bias is not a controlled value, p. 4--9 ? added .s2p file availability to product software and printed circuit boards to development tools, p. 14
mmg3007nt1 15 rf device data freescale semiconductor, inc. information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regar ding the suitab ility of its products for any particula r purpose, nor does freescale semiconductor assu me any liability ari sing out of the app lication or use of any product or circuit, and specifically discl aims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems int ended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subs idiaries, affiliate s, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale t and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2005--2008, 2012. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33169354848(french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1--8--1, shimo--meguro, meguro--ku, tokyo 153--0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1--800--441--2447 or +1--303--675--2140 fax: +1--303--675--2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mmg3007nt1 rev. 6, 2/2012

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